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| savantic semiconductor product specification silicon npn power transistors 2N6686 description with to-3 package fast switching speed low collector saturation voltage applications for power supplies and other high-voltage switching applications pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 260 v v ceo collector-emitter voltage open base 160 v v ebo emitter-base voltage open collector 8 v i c collector current 25 a i cm collector current-peak 50 a i b base current 8 a p c collector power dissipation t c =25 200 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 0.875 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2N6686 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a ;i b =0 160 v v cesat collector-emitter saturation voltage i c =25a; i b =2.5a 1.5 v v besat base-emitter saturation voltage i c =25a; i b =2.5a 1.8 v i cev collector cut-off current v ce =260v; v be =-1.5v 50 a i ebo emitter cut-off current v eb =8v; i c =0 100 a h fe-1 dc current gain i c =1a ; v ce =2v 30 h fe-2 dc current gain i c =10a ; v ce =2v 25 100 h fe-3 dc current gain i c =25a ; v ce =2v 15 f t transition frequency i c =1a ; v ce =10v 20 100 mhz savantic semiconductor product specification 3 silicon npn power transistors 2N6686 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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